ASM Structural Materials Data Demonstration Project

ASM Structural Materials Data Demonstration Project https://hdl.handle.net/11256/419 2026-04-25T10:58:13Z 2026-04-25T10:58:13Z Tensile and Microindentation Stress-Strain Curves of Al-6061 Weaver, Jordan S. Khosravani, Ali Castillo, Andrew Kalidindi, Surya R. https://hdl.handle.net/11256/774 2016-08-31T02:07:28Z

Tensile and Microindentation Stress-Strain Curves of Al-6061 Weaver, Jordan S.; Khosravani, Ali; Castillo, Andrew; Kalidindi, Surya R. Recent spherical microindentation stress-strain protocols were developed and validated on Al-6061 (DOI: 10.1186/s40192-016-0054-3). The scaling factor between the uniaxial yield strength and the indentation yield strength was determined to be about 1.9. The microindentation stress-strain protocols were then applied to a microstructurally graded sample in an effort to extract high throughput process-property relationships. The tensile and microindentation force-displacement and stress-strain data are presented in this data set.

Additional properties of Aluminum Alloy 6061 Gurke, Sasha Kaufman, J. Gilbert https://hdl.handle.net/11115/242 2016-04-05T16:54:36Z 2014-04-03T00:00:00Z

Additional properties of Aluminum Alloy 6061 Gurke, Sasha; Kaufman, J. Gilbert Spreadsheet with typical and minimum properties of wrought Al alloy 6061. Included fatigue, fracture and creep properties.

2014-04-03T00:00:00Z Tracer Diffusion of Magnesium in Aluminum Single Crystals Rothman, S. J. Peterson, N. L. Nowick, L. J. Robinson, L. C. https://hdl.handle.net/11115/238 2015-09-24T03:52:17Z 2014-02-16T00:00:00Z

Tracer Diffusion of Magnesium in Aluminum Single Crystals Rothman, S. J.; Peterson, N. L.; Nowick, L. J.; Robinson, L. C.

2014-02-16T00:00:00Z Study of Si self-diffusion by nuclear techniques Demond, F. J. Kalbitzer, S. Mannsperger, H. Damjantschitsch, H. https://hdl.handle.net/11115/237 2015-09-23T03:21:25Z 2014-02-10T00:00:00Z

Study of Si self-diffusion by nuclear techniques Demond, F. J.; Kalbitzer, S.; Mannsperger, H.; Damjantschitsch, H. By using ion implantation for preparation and p, γ-reactions for analysis of 30Si profiles the Si self-diffusion has been studied in the temperature range of 830–1200°C. The results reveal unambiguously that the diffusion process at the lower temperatures is characterized by parameters substantially smaller than those reported for the high-temperature regime.

2014-02-10T00:00:00Z