https://hdl.handle.net/11256/3 2026-04-16T22:02:03Z https://hdl.handle.net/11256/700 Co-Al-W Diffusion Mobilities Moon, Kil-Won; Campbell, Carelyn; Williams, Maureen; Boettinger, William Diffusion couple experiments between various Co-rich face centered cubic (FCC) alloys in the Co-W-Al ternary system have been conducted at 900 °C and 1000 °C. Diffusion coefficients have been extracted for the Co-W binary and for ternary alloys at compositions where the diffusion paths cross. In addition, a least squares method has been utilized to optimize diffusion mobility parameters using DICTRA simulations to best fit the experimental concentration vs. distance curves. Predictions of the diffusion matrix using the refined mobility database are in good agreement with the values obtained at the diffusion path crossing points. 2016-04-01T00:00:00Z https://hdl.handle.net/11256/22 Examination of Ni-base superalloy diffusion couples containing multiphase regions Campbell, Carelyn; Zhao, J-C; Henry, M. F. Four Ni-base superalloy diffusion couples with multiphase regions were studied. The diffusion couples contained single-phase (gamma ), two phase( gamma +MC carbide) and three-phase ( gamma + gamma prime+MC carbide) regions. Measured average composition profiles were in good agreement with the diffusion simulation predictions. The measured and predicted phase fraction profiles showed similar trends; however, there were some discrepancies in the predicted position of the gamma +gamma prime + MC/ gamma +MC boundary. Phase fraction profiles and optical metallography were used to determine the type and direction of the moving phase region boundaries. 2014-04-02T00:00:00Z https://hdl.handle.net/11115/238 Tracer Diffusion of Magnesium in Aluminum Single Crystals Rothman, S. J.; Peterson, N. L.; Nowick, L. J.; Robinson, L. C. 2014-02-16T00:00:00Z https://hdl.handle.net/11115/237 Study of Si self-diffusion by nuclear techniques Demond, F. J.; Kalbitzer, S.; Mannsperger, H.; Damjantschitsch, H. By using ion implantation for preparation and p, γ-reactions for analysis of 30Si profiles the Si self-diffusion has been studied in the temperature range of 830–1200°C. The results reveal unambiguously that the diffusion process at the lower temperatures is characterized by parameters substantially smaller than those reported for the high-temperature regime. 2014-02-10T00:00:00Z