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<title>ASM Structural Materials Data Demonstration Project</title>
<link>https://hdl.handle.net/11256/419</link>
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<pubDate>Sat, 25 Apr 2026 10:53:13 GMT</pubDate>
<dc:date>2026-04-25T10:53:13Z</dc:date>
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<title>Tensile and Microindentation Stress-Strain Curves of Al-6061</title>
<link>https://hdl.handle.net/11256/774</link>
<description>Tensile and Microindentation Stress-Strain Curves of Al-6061
Weaver, Jordan S.; Khosravani, Ali; Castillo, Andrew; Kalidindi, Surya R.
Recent spherical microindentation stress-strain protocols were developed and validated on Al-6061 (DOI: 10.1186/s40192-016-0054-3). The scaling factor between the uniaxial yield strength and the indentation yield strength was determined to be about 1.9. The microindentation stress-strain protocols were then applied to a microstructurally graded sample in an effort to extract high throughput process-property relationships. The tensile and microindentation force-displacement and stress-strain data are presented in this data set.
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<title>Additional properties of Aluminum Alloy 6061</title>
<link>https://hdl.handle.net/11115/242</link>
<description>Additional properties of Aluminum Alloy 6061
Gurke, Sasha; Kaufman, J. Gilbert
Spreadsheet with typical and minimum properties of wrought Al alloy 6061. Included fatigue, fracture and creep properties.
</description>
<pubDate>Thu, 03 Apr 2014 00:00:00 GMT</pubDate>
<guid isPermaLink="false">https://hdl.handle.net/11115/242</guid>
<dc:date>2014-04-03T00:00:00Z</dc:date>
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<item>
<title>Tracer Diffusion of Magnesium in Aluminum Single Crystals</title>
<link>https://hdl.handle.net/11115/238</link>
<description>Tracer Diffusion of Magnesium in Aluminum Single Crystals
Rothman, S. J.; Peterson, N. L.; Nowick, L. J.; Robinson, L. C.
</description>
<pubDate>Sun, 16 Feb 2014 00:00:00 GMT</pubDate>
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<dc:date>2014-02-16T00:00:00Z</dc:date>
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<title>Study of Si self-diffusion by nuclear techniques</title>
<link>https://hdl.handle.net/11115/237</link>
<description>Study of Si self-diffusion by nuclear techniques
Demond, F. J.; Kalbitzer, S.; Mannsperger, H.; Damjantschitsch, H.
By using ion implantation for preparation and p, γ-reactions for analysis of 30Si profiles the Si self-diffusion has been studied in the temperature range of 830–1200°C. The results reveal unambiguously that the diffusion process at the lower temperatures is characterized by parameters substantially smaller than those reported for the high-temperature regime.
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<pubDate>Mon, 10 Feb 2014 00:00:00 GMT</pubDate>
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<dc:date>2014-02-10T00:00:00Z</dc:date>
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