Browsing Diffusion Data by Subject "Computational File Repository Categories::PHASES::A4_Diamond"
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Study of Si self-diffusion by nuclear techniques
(2014-02-10)By using ion implantation for preparation and p, γ-reactions for analysis of 30Si profiles the Si self-diffusion has been studied in the temperature range of 830–1200°C. The results reveal unambiguously that the diffusion ...