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dc.contributorUniversity of Central Florida, Orlando, FLen_US
dc.contributorOakridge National Laboratory, Oakridge, TN
dc.contributor.authorBrennan, Sarah
dc.contributor.authorWarren, Andrew P.
dc.contributor.authorCoffey, Kevin R.
dc.contributor.authorKulkarni, Nagraj
dc.contributor.authorTodd, Peter
dc.contributor.authorKilmov, Mikhail
dc.contributor.authorSohn, Yongho
dc.identifier.citationBrennan S, Warren AP, Coffey KR, Kulkarni N, Todd P, Kilmov M, Sohn Y. J. Phase. Equil. Dif. 2012;33:121.en_US
dc.description.abstractThe diffusion of Al in polycrystalline Mg (99.9%) was studied via depth profiling with secondary ion mass spectrometry in the temperature range of 573-673 K, utilizing the thin film method and thin film solution to the diffusion equation. Multiple samples with multiple depth profiles on each sample were obtained to determine statistically confident coefficients with a maximum standard deviation between measurements of 16%. The activation energy and pre-exponential factor of Al impurity diffusion in Mg were determined as 155 kJ/mole and 3.931023 m2/s, respectively. The Mg substrates have a small grain size ( 10 lm) and therefore some contributions from grain boundary diffusion are expected in the measurements. Sputter roughening during depth profiling, which is inherent to the SIMS process, also contributes to the measured diffusion coefficient, especially in samples with smaller grain sizes.en_US
dc.description.sponsorshipFinancial support from the U.S. Department of Energy, Assistant Secretary for Energy Efficiency and Renewable Energy, Office of Vehicle Technologies, Automotive Lightweight Materials Program under contract DE-AC05-00OR 22725 with UT-Battelle, LLC is gratefully acknowledged.en_US
dc.rightsAttribution-ShareAlike 3.0 United States*
dc.subjectImpurity Diffusivityen_US
dc.titleAl Impurity Diffusion in Mgen_US

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