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dc.contributorUniversity College, Swansea, South Wales, UKen_US
dc.contributorIndian Institute of Technology, Kanpur, Indiaen_US
dc.contributor.authorBurke, J.
dc.contributor.authorRamachandran, T. R.
dc.date.accessioned2014-01-20T11:42:20Z
dc.date.accessioned2015-06-10T20:13:10Z
dc.date.available2014-01-20T11:42:20Z
dc.date.available2015-06-10T20:13:10Z
dc.date.issued2014-01-20
dc.identifier.citationBurke, J. and Ramachandran, T.R., Metall. Trans. 3 (1972) 147.en_US
dc.identifier.urihttp://hdl.handle.net/11115/234
dc.description.abstractValues of the self-diffusivity of pure aluminum in the temperature range 130∮ to 200° have been determined by measuring the rate of annealing of prismatic and faulted dislocation loops in thin foils of quenched 99.999 pct Al using a diffusion-controlled climb model due to Seidman and Balluffi modified to take into account elastic interaction between vacancies and dislocations. Changes in line energy of prismatic loops with orientation were evaluated and found to produce a maximum error in D of 17 pct. Other possible sources of error were evaluated. The results giveD = 0.19 ± 0.06 exp—(1.28 ± 0.04ev /KT sq cm per sec. A direct method of determining the activation energy for self-diffusion from prismatic loop annealing rates is presented which minimizes the effects of many sources of variation in individual climb rates.en_US
dc.relation.urihttp://dx.doi.org/10.1007/BF02680593en_US
dc.rightsCC0 1.0 Universal*
dc.rights.urihttp://creativecommons.org/publicdomain/zero/1.0/*
dc.subjectComputational File Repository Categories::ALL CHEMICAL SYSTEMS::Al (Aluminum)en_US
dc.titleSelf-diffusion in aluminum at low temperaturesen_US
dc.typeDataseten_US
dc.typeDiffusion Mobilities


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