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dc.contributor1) Ceramics Division, Materials Science and Engineering Laboratory, National Institute of Standards and Technology; 2) Materials Science and Engineering Department, Northwestern University; 3) Metallurgy Division, Materials Science and Engineering Laboratory, National Institute of Standards and Technology).
dc.contributor.authorBurton, Benjamin P.
dc.contributor.otherbenjamin.burton@nist.gov
dc.date.accessioned2013-01-31T21:13:59Z
dc.date.accessioned2014-08-05T19:24:43Z
dc.date.available2013-01-31T21:13:59Z
dc.date.available2014-08-05T19:24:43Z
dc.date.issued2013-01-31
dc.identifier.urihttp://hdl.handle.net/11115/50
dc.description.abstractFirst principles phase diagram calculations were performed for the wurtzite-structure quasibinary systems AlN–GaN, GaN–InN, and AlN–InN.en_US
dc.description.sponsorshipen_US
dc.relationB. Burton, A. van de Walle, U. Kattner, First principles phase diagram calculations for the wurtzite-structure systems AlN–GaN, GaN–InN, and AlN–InN Journal of Applied Physics, 100 (11) (2006)
dc.relation.urihttp://dx.doi.org/10.1063/1.2372309
dc.rightsCC0 1.0 Universal*
dc.rights.urihttp://creativecommons.org/publicdomain/zero/1.0/*
dc.subjectFile Repository Categories::Chemical Systems::Al (Aluminum)en_US
dc.titleAlN–GaN; GaN–InN; AlN–InNen_US
dc.typeDataseten_US


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