AlN–GaN; GaN–InN; AlN–InN
| dc.contributor.author | Burton, Benjamin P. | |
| dc.contributor.other | benjamin.burton@nist.gov | |
| dc.date.accessioned | 2013-01-31T21:13:59Z | |
| dc.date.accessioned | 2014-08-05T19:24:43Z | |
| dc.date.available | 2013-01-31T21:13:59Z | |
| dc.date.available | 2014-08-05T19:24:43Z | |
| dc.date.issued | 2013-01-31 | |
| dc.identifier.uri | http://hdl.handle.net/11115/50 | |
| dc.description.abstract | First principles phase diagram calculations were performed for the wurtzite-structure quasibinary systems AlN–GaN, GaN–InN, and AlN–InN. | en_US |
| dc.description.sponsorship | en_US | |
| dc.relation | B. Burton, A. van de Walle, U. Kattner, First principles phase diagram calculations for the wurtzite-structure systems AlN–GaN, GaN–InN, and AlN–InN Journal of Applied Physics, 100 (11) (2006) | |
| dc.relation.uri | http://dx.doi.org/10.1063/1.2372309 | |
| dc.rights | CC0 1.0 Universal | * |
| dc.rights.uri | http://creativecommons.org/publicdomain/zero/1.0/ | * |
| dc.subject | File Repository Categories::Chemical Systems::Al (Aluminum) | en_US |
| dc.title | AlN–GaN; GaN–InN; AlN–InN | en_US |
| dc.type | Dataset | en_US |
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