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    Study of Si self-diffusion by nuclear techniques 

    Demond, F. J.; Kalbitzer, S.; Mannsperger, H.; Damjantschitsch, H. (2014-02-10)
    By using ion implantation for preparation and p, γ-reactions for analysis of 30Si profiles the Si self-diffusion has been studied in the temperature range of 830–1200°C. The results reveal unambiguously that the diffusion ...

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    AuthorDamjantschitsch, H. (1)Demond, F. J. (1)Kalbitzer, S. (1)Mannsperger, H. (1)Subject
    ion-implantation (1)
    PHASES (1)
    PROPERTY CLASSES (1)
    Si (1)... View MoreDate Issued2014 (1)Has File(s)Yes (1)

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