Study of Si self-diffusion by nuclear techniques
Demond, F. J.
CitationDemond, F. J., et al. (1983). "Study of Si self-diffusion by nuclear techniques." Physics Letters A 93(9): 503-506.
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By using ion implantation for preparation and p, γ-reactions for analysis of 30Si profiles the Si self-diffusion has been studied in the temperature range of 830–1200°C. The results reveal unambiguously that the diffusion process at the lower temperatures is characterized by parameters substantially smaller than those reported for the high-temperature regime.