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Study of Si self-diffusion by nuclear techniques

dc.contributorMax-Planck-Institut für Kernphysik, D-6900 Heidelberg, Fed. Rep. Germanyen_US
dc.contributor.authorDemond, F. J.
dc.contributor.authorKalbitzer, S.
dc.contributor.authorMannsperger, H.
dc.contributor.authorDamjantschitsch, H.
dc.contributor.othercarelyn.campbell@nist.goven_US
dc.date.accessioned2014-02-10T05:57:44Z
dc.date.accessioned2015-06-10T20:13:11Z
dc.date.available2014-02-10T05:57:44Z
dc.date.available2015-06-10T20:13:11Z
dc.date.issued2014-02-10
dc.identifier.citationDemond, F. J., et al. (1983). "Study of Si self-diffusion by nuclear techniques." Physics Letters A 93(9): 503-506.en_US
dc.identifier.urihttp://hdl.handle.net/11115/237
dc.description.abstractBy using ion implantation for preparation and p, γ-reactions for analysis of 30Si profiles the Si self-diffusion has been studied in the temperature range of 830–1200°C. The results reveal unambiguously that the diffusion process at the lower temperatures is characterized by parameters substantially smaller than those reported for the high-temperature regime.en_US
dc.relation.urihttp://dx.doi.org/10.1016/0375-9601(83)90641-2en_US
dc.rightsCC0 1.0 Universal*
dc.rights.urihttp://creativecommons.org/publicdomain/zero/1.0/*
dc.subjectComputational File Repository Categories::PHASES::A4_Diamonden_US
dc.subjectComputational File Repository Categories::PROPERTY CLASSES::Kinetics::Diffusion::Tracer Diffusion
dc.subjectSi
dc.subjection-implantation
dc.titleStudy of Si self-diffusion by nuclear techniquesen_US
dc.typeDataseten_US


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